Effect of irradiation temperature and ion flux on electrical isolation of GaN

Implant isolation of ZnO

We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV O ions ~up to ;2 orders of magnitude above the threshold isolation dose! and irradiation temperature ~up to 350 °C) has a...

Electrical isolation of GaN by MeV ion irradiation

Fabrication of Copper and Iron Nano/Micro Structures on Semiconducting Substrate and Their Electrical Characterization

In this paper, we have studied the electrical properties of the randomly distributed metallic (Co and Fe) nano/ micro wires on Silicon substrate. Deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the Si substrate. Spin coated films were irradiated with 150MeV Ni (+11) ions at a fluence of 8E7 ions/cm2, followed by UV irradiati...

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...